Forward- and reverse-biased electroluminescence behavior of chemically fabricated ZnO nanotubes/GaN interface

Semiconductor Science and Technology

Volumn 26, Issue 7, 2011, Pages

  Sadaf, J R ^a   Israr, M Q ^a   Kishwar, S ^a   Nur, O ^a   Willander, M ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT; CURRENT TRANSPORT MECHANISM; ELECTRON HOLE; EMISSION INTENSITY; EMISSION PEAKS; EMISSION SPECTRUMS; FORWARD BIAS; HETEROSTRUCTURES; REVERSE BIAS; VIOLET-BLUE EMISSIONS; ZNO;

ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; HETEROJUNCTIONS; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 79953888470     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/7/075003     Document Type: Review

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