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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1784-1788

Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

(4) Bayram, C a Razeghi, M a Rogers, D J b Teherani, F Hosseini b

a NORTHWESTERN UNIVERSITY (United States)

b 8 Route de Chevreuse France (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIODES; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; WATER ANALYSIS; X RAY DIFFRACTION; ZINC OXIDE;

GREEN LIGHT EMITTING DIODES; HIGH RESOLUTION X RAY DIFFRACTION; HYBRID DEVICES; INGAN/GAN; P-N JUNCTION; SCANNING ELECTRON MICROSCOPE; ZNO;

HIGH RESOLUTION ELECTRON MICROSCOPY;

EID: 70349142201 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3116590 Document Type: Conference Paper

Times cited : (9)

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