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Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 3, 2010, Pages

Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges

(1) Schubert, Martin F a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954831770 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.81.035303 Document Type: Article

Times cited : (51)

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