Study on the interfacial layer in ZnO/GaN heterostructure light-emitting diode

Materials Science and Engineering: B

Volumn 157, Issue 1-3, 2009, Pages 32-35

  Hwang, Seung Ho ^a   Chung, Tae Hoon ^a   Lee, Byung Teak ^a  

^a Chonnam National University   (South Korea)

Author keywords

Heterostructure; Interfacial layer; Light emitting diode; Sputter deposition; ZnO

Indexed keywords

ALUMINUM COMPOUNDS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

BROAD BANDS; ELECTROLUMINESCENCE CHARACTERISTICS; GA-DOPED; INTERFACIAL LAYER; LIGHTEMITTING DIODE; P-N JUNCTION; YELLOW LIGHT; ZNO LAYERS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 59649106319     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.12.004     Document Type: Article

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