Electroluminescence of an n-ZnO/p-GaN heterojunction under forward and reverse biases

Chinese Physics Letters

Volumn 22, Issue 9, 2005, Pages 2298-2301

  Qin, Qi ^a   Guo, Li Wei ^a   Zhou, Zhong Tang ^a   Chen, Hong ^a   Du, Xiao Long ^a   Mei, Zeng Xia ^a   Jia, Jin Feng ^a   Xue, Qi Kun ^a   Zhou, Jun Ming ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; ZINC OXIDE;

ACCEPTOR STATE; CARRIERS TRANSPORT; CONDUCTION BAND EDGE STATE; FORWARD BIAS; LIGHT INTENSITY; LOCALISED; REVERSE CURRENTS; REVERSE-BIAS; YELLOW BANDS; YELLOW EMISSIONS;

GALLIUM NITRIDE;

EID: 24644524229     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/9/044     Document Type: Article

References (33)

1. Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Y and Goto T 1997 Appl. Phys. Lett. 70 2230
2. Xiang W H, Zhang G Z, Sun Y, Wang G and John B K 2003 Chin. Phys. Lett. 20 296
3. Liu M J and Kim H K 2004 Appl. Phys. Lett. 84 173
4. Liang W Y and Yoffe A D 1969 Phys. Rev. Lett. 20 59
5. Look D C 2001 Mater. Sci. Eng. B80 383
6. Look D C, Reynolds D C, Litton C W, Jones R L, Eason and Cantwell 2002 Appl. Phys. Lett. 81 1830
7. Look D C 2002 Abstract Booklet, Second International Workshop on Zinc Oxide (Dayton, OH: Wright State University)
8. Sukit L, Zhang S B, Wei S H and Park C H 2004 Phys. Rev. Lett. 92 155504
9. Lee E C and Chang K J 2004 Phys. Rev. B 70 115210
10. Vispute R D, Talyansky V, Choopun S, Sharma R P, Venkatesan T, He M, Tang X, Halpern J B, Spencer M G, Li Y X, Salamanca-Riba L G and Iliadis A A 1998 Appl. Phys. Lett. 73 348
11. Hong S K, Hanada T, Makino H, Chen Y f, Ko H J, Yao T, Tanaka A, Sasaki H and Sato S 2001 Appl. Phys. Lett. 78 3349
12. Alivov Y I, Kalinin E V, Cherenkov A E, Look D C, Ataev B M, Omaev A K, Chukichev M V and Bagnall D M 2003 Appl. Phys. Lett. 83 4719
13. Alivov Y I, Van Nostrand J E, Look D C, Chukichev M V and Ataev B M 2003 Appl. Phys. Lett. 83 2943
14. Park W I and Yi G C 2004 Adv. Mater. 16 87
15. Yu Q X, Xu B, Wu Q H, Liao Y, Wang G Z, Fang R C, Lee H Y and Lee C T 2003 Appl. Phys. Lett. 83 4713
16. Perlin P, Suski T, Teisseyre H, Leszczynski M, Grzegory I, Jun J, Porowski S, Boguslawski P, Bernholc J, Chervin J C, Polian A and Moustakas T D 1995 Phys. Rev. Lett. 75 296
17. Shan W, Schmidt T J, Yang X H, Hwang S J, Song J J and Goldenberg B 1995 Appl. Phys. Lett. 66 985
18. Kim S, Herman I P, Tuchman J A, Doverspike K, Rowland L B and Gaskill D K 1995 Appl. Phys. Lett. 67 380
19. Shalish, Kronik L, Segal G, Rosenwaks Y, Shapira Y, Tisch U and Salzman J 1999 Phys. Rev. B 59 9748
20. Zheng X H, Chen H, Yan Z B, Li D S, Yu H B, Huang Q and Zhou J M 2004 J. Appl. Phys. 96 1899
21. Viswanath A, Shin E, Lee J I, Yu S, Kim D, Kim B, Choi Y and Hong C H 1998 J. Appl. Phys. 83 2272
22. Oh E, Park H and Park Y 1998 Appl. Phys. Lett. 72 70
23. Smith M, Chen G D, Lin J Y, Jiang H X, Salvador A, Sverdlov B N, Botchkarev A, Morkoç H and Goldenberg B 1996 Appl. Phys. Lett. 68 1883
24. Kaufmann U, Kunzer M, Maier M, Obloh H, Ramakrishnan A, Santic B and Schlotter P 1998 Appl. Phys. Lett. 72 1326
25. Götz W, Johnson N M, Walker J, Bour D P and Street R A 1996 Appl. Phys. Lett. 68 667
26. Reshchikov M A, Yi G C and Wessels B W 1999 Phys. Rev. B 59 13176
27. Glaser E R, Kennedy T A, Crookham H C, Freitas J A, Asif Khan M Jr, Olson D T and Kuznia J N 1993 Appl. Phys. Lett. 63 2673
28. Glaser E R, Kennedy T A, Doverspike K, Rowland L B, Gaskill D K, Freitas J A, Asif Khan M Jr, Olson D T, Kuznia J N and Wickenden D K 1995 Phys. Rev. B 51 13326
29. Studenikin S A, Golego N and Cocivera M 1998 J. Appl. Phys. 84 2287
30. Chynoweth A G and McKay K G 1956 Phys. Rev. 102 369
31. Chynoweth A G and Pearson G L 1958 J. Appl. Phys. 29 1103
32. Pilkuhn M and Rupprecht H 1965 J. Appl. Phys. 36 684
33. Nakayama T and Murayama M 2000 J. Cryst. Growth 214 299