Impedance study of GaN and InGaN semiconductor anion selective electrodes

Electroanalysis

Volumn 20, Issue 7, 2008, Pages 789-796

  Dimitrova, Rozalina ^a   Catalan, Lionel ^a   Alexandrov, Dimiter ^a   Chen, Aicheng ^a  

^a LAKEHEAD UNIVERSITY   (Canada)

Author keywords

Electrochemical impedance; Equivalent circuits; GaN; In0.2Ga0.8N; Interface; Ion selective electrode

Indexed keywords

ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NEGATIVE IONS; POTASH; POTASSIUM NITRATE; SEMICONDUCTING GALLIUM COMPOUNDS; TIMING CIRCUITS; WIDE BAND GAP SEMICONDUCTORS;

ANION SELECTIVE ELECTRODES; CALIBRATION PLOT; ELECTROCHEMICAL IMPEDANCE; ELECTRODE-ELECTROLYTE INTERFACES; IMPEDANCE STUDIES; IN0.2GA0.8N; ION-SELECTIVE ELECTRODE; POTENTIOMETRICS; SEMICONDUCTOR ELECTRODE; SENSING ELEMENTS;

EQUIVALENT CIRCUITS;

EID: 54549103365     PISSN: 10400397     EISSN: 15214109     Source Type: Journal    
DOI: 10.1002/elan.200704100     Document Type: Article

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