ZnO-based fairly pure ultraviolet light-emitting diodes with a low operation voltage

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1063-1065

  Huang, Huihui ^a   Fang, Guojia ^a   Mo, Xiaoming ^a   Long, Hao ^a   Yuan, Longyan ^a   Dong, Binzhong ^a   Meng, Xianquan ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

Electroluminescence (EL); HfO2; Lightemitting diode (LED); Metal insulator semiconductor (MIS); Ultraviolet (UV); ZnO

Indexed keywords

DRY BATTERY; EMISSION PEAKING; GAN/SAPPHIRE; LOW THRESHOLD VOLTAGE; METAL INSULATORS; METAL-INSULATOR-SEMICONDUCTORS; OPERATION VOLTAGE; RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM; ULTRA-VIOLET; ULTRAVIOLET (UV); ULTRAVIOLET LIGHT-EMITTING DIODES; UV LIGHT; ZNO;

CURRENT DENSITY; DIODES; ELECTROLUMINESCENCE; HAFNIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; MAGNETRON SPUTTERING; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SUBSTRATES; SWITCHING CIRCUITS; THRESHOLD VOLTAGE; ULTRAVIOLET RADIATION; ZINC OXIDE;

SEMICONDUCTOR DIODES;

EID: 72049105571     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2028904     Document Type: Article

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