Fabrication and characterization of high-brightness light emitting diodes based on n-ZnO nanorods grown by a low-temperature chemical method on p-4H-SiC and p-GaN

Semiconductor Science and Technology

Volumn 25, Issue 6, 2010, Pages

  Alvi, N H ^a   Riaz, M ^a   Tzamalis, G ^a   Nur, O ^a   Willander, M ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS CHEMICAL GROWTH; BLUE-SHIFTED; CHEMICAL METHOD; ELECTROLUMINESCENCE EMISSION; EMISSION LINES; GAN LEDS; GAN SUBSTRATE; HIGH BRIGHTNESS; LOW TEMPERATURES; ORANGE-RED; RED-SHIFTED; ROOM-TEMPERATURE PHOTOLUMINESCENCE; WHITE LIGHT; ZNO; ZNO NANOROD;

ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; NANORODS; SILICON CARBIDE; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 77952407466     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/6/065004     Document Type: Article

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