Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas

Materials Chemistry and Physics

Volumn 54, Issue 1-3, 1998, Pages 37-43

  Felch, S B ^a,d   Lee, B S ^a   Daryanani, S L ^b   Downey, D F ^b   Matyi, R J ^c  

^a Varian Inc   (United States)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^c UNIVERSITY OF WISCONSIN MADISON   (United States)

^d VARIAN MEDICAL SYSTEMS   (United States)

Author keywords

Nitrogen implantation; Plasma doping; Shallow junction formation

Indexed keywords

ANNEALING; BORON COMPOUNDS; FABRICATION; ION IMPLANTATION; MOSFET DEVICES; NITROGEN; PLASMA APPLICATIONS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SURFACES;

BORON FLUORITE; NITROGEN IMPLANTATION; PLASMA DOPING; SHALLOW JUNCTION FORMATION; ULTRA SHALLOW JUNCTIONS;

SEMICONDUCTOR DOPING;

EID: 0032117336     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00065-0     Document Type: Article

References (7)

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