The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 139-143

  Kyllesbech Larsen, K ^a,b   Privitera, V ^a   Coffa, S ^a   Priolo, F ^b   Spinella, C ^a   Saggio, M ^a   Campisano, S U ^b  

^a CNR IMETEM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRICAL ACTIVATION; IMPLANTATION INDUCED DAMAGE STRUCTURE; SHALLOW IMPLANTED BORON JUNCTIONS; SPREADING RESISTANCE PROFILING;

ION IMPLANTATION;

EID: 0030563227     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01243-5     Document Type: Article

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