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Volumn 124-125, Issue SUPPL., 2005, Pages 188-191

A comparative study on ultra-shallow junction formation using co-implantation with fluorine or carbon in pre-amorphized silicon

Author keywords

PMOS devices; Pre amorphized silicon; Ultra shallow formation

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CMOS INTEGRATED CIRCUITS; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); ION IMPLANTATION; MOS DEVICES;

EID: 27844536167     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.040     Document Type: Conference Paper
Times cited : (14)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.