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Volumn 124-125, Issue SUPPL., 2005, Pages 188-191
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A comparative study on ultra-shallow junction formation using co-implantation with fluorine or carbon in pre-amorphized silicon
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Author keywords
PMOS devices; Pre amorphized silicon; Ultra shallow formation
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Indexed keywords
AMORPHOUS SILICON;
ANNEALING;
CMOS INTEGRATED CIRCUITS;
DIFFUSION IN SOLIDS;
DOPING (ADDITIVES);
ION IMPLANTATION;
MOS DEVICES;
CO-DOPING;
PMOS DEVICE;
PRE-AMORPHIZED SILICON;
ULTRA-SHALLOW FORMATION;
SEMICONDUCTOR JUNCTIONS;
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EID: 27844536167
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.040 Document Type: Conference Paper |
Times cited : (14)
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References (11)
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