Predictive simulation of advanced nano-CMOS devices based on kMC process simulation

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2155-2163

  Mok, K R C ^a   Colombeau, B ^a   Benistant, F ^a   Teo, R S ^a   Yeong, S H ^a   Yang, B ^a   Jaraiz, M ^b   Chu, Shao Fu Sanford ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Advanced CMOS technology; Atomistic simulations; Nanodevices; Physical modeling; Technology computer aided design (TCAD)

Indexed keywords

CALIBRATION; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; MONTE CARLO METHODS; NANOELECTRONICS; OPTIMIZATION;

ADVANCED CMOS TECHNOLOGY; ATOMISTIC SIMULATION; NANODEVICES; PREDICTIVE SIMULATION; TECHNOLOGY COMPUTER AIDED DESIGN (TCAD);

CMOS INTEGRATED CIRCUITS;

EID: 41749105105     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902698     Document Type: Article

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