SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 14, 2010, Pages

Formation of iridium nanocrystals with highly thermal stability for the applications of nonvolatile memory device with excellent trapping ability

(4) Wang, Terry Tai Jui a Chu, Chang Lung a Hsieh, Ing Jar b Tseng, Wen Shou c

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b CHUNG HUA UNIVERSITY (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CAPACITANCE VOLTAGE; MATRIX; NONVOLATILE MEMORY DEVICES; POTENTIAL APPLICATIONS; PROCESS TIME; RETENTION ABILITY; THERMAL AGGLOMERATION; THERMAL STABILITY; TRAPPING ABILITY;

AGGLOMERATION; NANOCRYSTALS; NONVOLATILE STORAGE; SILICON COMPOUNDS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

IRIDIUM;

EID: 77958033213 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3498049 Document Type: Article

Times cited : (20)

References (21)

1
- 0000298224
- A silicon nanocrystals based memory
- DOI 10.1063/1.116085, PII S0003695196003105
- S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabb́, and K. Chan, Appl. Phys. Lett. APPLAB 0003-6951 68, 1377 (1996). 10.1063/1.116085 (Pubitemid 126688256)
- (1996) Applied Physics Letters , vol.68 , Issue.10 , pp. 1377-1379
- Tiwari, S.¹ Rana, F.² Hanafi, H.³ Hartstein, A.⁴ Crabbe, E.F.⁵ Chan, K.⁶

2
- 34250679828
- Singapore, (IEEE, New York, 2006)
- C. Y. Lu, T. C. Lu, and R. Liu, Proceedings of the 13th International Physical and Failure Analysis of Integrated Circuits Symposium, Singapore, 2006 (IEEE, New York, 2006), pp. 18-23.
- (2006) Proceedings of the 13th International Physical and Failure Analysis of Integrated Circuits Symposium , pp. 18-23
- Lu, C.Y.¹ Lu, T.C.² Liu, R.³

3
- 0842266586
- TDIMD5 0163-1918.
- C. Lee, A. Gorur-Seetharam, and E. C. Kan, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 557.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 557
- Lee, C.¹ Gorur-Seetharam, A.² Kan, E.C.³

4
- 77952395171
- APPLAB 0003-6951,. 10.1063/1.3421546
- B. Li, J. Ren, and J. Liu, Appl. Phys. Lett. APPLAB 0003-6951 96, 172104 (2010). 10.1063/1.3421546
- (2010) Appl. Phys. Lett. , vol.96 , pp. 172104
- Li, B.¹ Ren, J.² Liu, J.³

5
- 17944366920
- Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications
- DOI 10.1063/1.1881778, 103505
- J. J. Lee, Y. Harada, J. W. Pyun, and D. L. Kwong, Appl. Phys. Lett. APPLAB 0003-6951 86, 103505 (2005). 10.1063/1.1881778 (Pubitemid 40597140)
- (2005) Applied Physics Letters , vol.86 , Issue.10 , pp. 1-3
- Lee, J.J.¹ Harada, Y.² Pyun, J.W.³ Kwong, D.-L.⁴

6
- 17944366377
- Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications
- DOI 10.1063/1.1890481, 123110
- S. Choi, S. S. Kim, M. Chang, and H. Hwang, Appl. Phys. Lett. APPLAB 0003-6951 86, 123110 (2005). 10.1063/1.1890481 (Pubitemid 40596938)
- (2005) Applied Physics Letters , vol.86 , Issue.12 , pp. 1-3
- Choi, S.¹ Kim, S.-S.² Chang, M.³ Hwang, H.⁴ Jeon, S.⁵ Kim, C.⁶

7
- 0017556846
- Work function of the elements and its periodicity
- DOI 10.1063/1.323539
- H. B. Michaelson, J. Appl. Phys. JAPIAU 0021-8979 48, 4729 (1977). 10.1063/1.323539 (Pubitemid 8557760)
- (1977) Journal of Applied Physics , vol.48 , Issue.11 , pp. 4729-4733
- Michaelson, H.B.¹

8
- 34547668785
- Metallic nano-crystals for flash memories
- DOI 10.1016/j.msec.2006.09.037, PII S0928493106003390
- J. Dufourcq, P. Mur, M. J. Gordon, S. Minoret, R. Coppard, and T. Baron, Mater. Sci. Eng., C MSCEEE 0928-4931 27, 1496 (2007). 10.1016/j.msec.2006.09.037 (Pubitemid 47211882)
- (2007) Materials Science and Engineering C , vol.27 , Issue.SPEC. ISS. , pp. 1496-1499
- Dufourcq, J.¹ Mur, P.² Gordon, M.J.³ Minoret, S.⁴ Coppard, R.⁵ Baron, T.⁶

9
- 59049101290
- MIENEF 0167-9317,. 10.1016/j.mee.2008.08.007
- C. Y. Lu, K. Y. Hsieh, and R. Liu, Microelectron. Eng. MIENEF 0167-9317 86, 283 (2009). 10.1016/j.mee.2008.08.007
- (2009) Microelectron. Eng. , vol.86 , pp. 283
- Lu, C.Y.¹ Hsieh, K.Y.² Liu, R.³

10
- 0036715044
- Metal nanocrystal memories - Part II: Electrical characteristics
- DOI 10.1109/TED.2002.802618, PII 1011092002802618
- Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices IETDAI 0018-9383 49, 1614 (2002). 10.1109/TED.2002.802618 (Pubitemid 35017148)
- (2002) IEEE Transactions on Electron Devices , vol.49 , Issue.9 , pp. 1614-1622
- Liu, Z.¹ Lee, C.² Narayanan, V.³ Pei, G.⁴ Kan, E.C.⁵

11
- 0037502846
- JESOAN 0013-4651,. 10.1149/1.1562935
- C. W. Chung, H. I. Kim, and Y. S. Song, J. Electrochem. Soc. JESOAN 0013-4651 150, G297 (2003). 10.1149/1.1562935
- (2003) J. Electrochem. Soc. , vol.150 , pp. 297
- Chung, C.W.¹ Kim, H.I.² Song, Y.S.³

12
- 0142075848
- JAPNDE 0021-4922,. 10.1143/JJAP.42.5010
- M. Youm, H. S. Sim, H. Jeon, S. I. Kim, and Y. T. Kim, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 42, 5010 (2003). 10.1143/JJAP.42.5010
- (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 5010
- Youm, M.¹ Sim, H.S.² Jeon, H.³ Kim, S.I.⁴ Kim, Y.T.⁵

13
- 40849131104
- Dual-metal-gate work function by controlling metal gate thickness and composition
- DOI 10.1149/1.2862791
- M. Hasan, H. Park, J. M. Lee, and H. Hwang, Electrochem. Solid-State Lett. ESLEF6 1099-0062 11, H124 (2008). 10.1149/1.2862791 (Pubitemid 351394225)
- (2008) Electrochemical and Solid-State Letters , vol.11 , Issue.5
- Hasan, M.¹ Park, H.² Lee, J.-M.³ Hwang, H.⁴

14
- 33847640079
- xSi gates with high work function on HfSiON p-MOSFETs
- DOI 10.1109/TED.2006.888626
- B. F. Hung, C. H. Wu, A. Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, and M. S. Liang, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 257 (2007). 10.1109/TED.2006.888626 (Pubitemid 46358410)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.2 , pp. 257-261
- Hung, B.F.¹ Wu, C.H.² Chin, A.³ Wang, S.J.⁴ Yen, F.Y.⁵ Hou, Y.T.⁶ Jin, Y.⁷ Tao, H.J.⁸ Chen, S.C.⁹ Liang, M.-S.¹⁰

15
- 77952676654
- JJAPA5 0021-4922,. 10.1143/JJAP.48.085502
- W. S. Tseng, W. H. Wang, T. H. Hong, and C. T. Kuo, Jpn. J. Appl. Phys. JJAPA5 0021-4922 48, 085502 (2009). 10.1143/JJAP.48.085502
- (2009) Jpn. J. Appl. Phys. , vol.48 , pp. 085502
- Tseng, W.S.¹ Wang, W.H.² Hong, T.H.³ Kuo, C.T.⁴

16
- 33845928903
- Design optimization of metal nanocrystal memory - Part I: Nanocrystal array engineering
- DOI 10.1109/TED.2006.885677
- T. H. Hou, C. Lee, V. Narayanan, U. Ganguly, and E. C. Kan, IEEE Trans. Electron Devices IETDAI 0018-9383 53, 3095 (2006). 10.1109/TED.2006.885677 (Pubitemid 46417125)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.12 , pp. 3095-3102
- Hou, T.-H.¹ Lee, C.² Narayanan, V.³ Ganguly, U.⁴ Kan, E.C.⁵

17
- 42349116747
- Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
- DOI 10.1063/1.2905812
- W. R. Chen, T. C. Chang, J. L. Yeh, S. M. Sze, and C. Y. Chang, Appl. Phys. Lett. APPLAB 0003-6951 92, 152114 (2008). 10.1063/1.2905812 (Pubitemid 351555712)
- (2008) Applied Physics Letters , vol.92 , Issue.15 , pp. 152114
- Chen, W.-R.¹ Chang, T.-C.² Yeh, J.-L.³ Sze, S.M.⁴ Chang, C.-Y.⁵

18
- 36049050046
- 2 gate material
- DOI 10.1016/j.tsf.2007.07.008, PII S0040609007011285
- H. R. Lee, S. Choi, K. Cho, and S. Kim, Thin Solid Films THSFAP 0040-6090 516, 412 (2007). 10.1016/j.tsf.2007.07.008 (Pubitemid 350102599)
- (2007) Thin Solid Films , vol.516 , Issue.2-4 , pp. 412-416
- Lee, H.-R.¹ Choi, S.² Cho, K.³ Kim, S.⁴

19
- 0029718242
- ZZZZZZ 1082-7285.
- A. Teramoto, K. Kobayashi, Y. Matsui, M. Hirayama, and A. Yasuka, IEEE Proc. Int. Reliab. Phys. Symp. ZZZZZZ 1082-7285 1996, 113.
- IEEE Proc. Int. Reliab. Phys. Symp. , vol.1996 , pp. 113
- Teramoto, A.¹ Kobayashi, K.² Matsui, Y.³ Hirayama, M.⁴ Yasuka, A.⁵

20
- 0036865997
- 10.1109/TED.2002.804711 0741-3106
- T. H. Wang, N. K. Zous, and C. C. Yeh, IEEE Trans. Electron Device 49, 1910 (2002). 10.1109/TED.2002.804711 0741-3106
- (2002) IEEE Trans. Electron Device , vol.49 , pp. 1910
- Wang, T.H.¹ Zous, N.K.² Yeh, C.C.³

21
- 37549049330
- EDLEDZ 0741-3106,. 10.1109/LED.2007.910785
- T. Wang, H. C. Ma, C. H. Li, Y. H. Lin, C. H. Chien, and T. F. Lei, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 109 (2008). 10.1109/LED.2007.910785
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 109
- Wang, T.¹ Ma, H.C.² Li, C.H.³ Lin, Y.H.⁴ Chien, C.H.⁵ Lei, T.F.⁶

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