Nonvolatile flash memory devices using CeO2 nanocrystal trapping layer for two-bit per cell applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 6 A, 2007, Pages 3291-3295

  Yang, Shao Ming ^a   Chien, Chao Hsin ^a   Huang, Jiun Jia ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Cerium oxide; Flash memory; Nanocrystal; Retention; Trapping layer

Indexed keywords

CERIUM COMPOUNDS; CHARGED PARTICLES; ELECTRIC CHARGE; NANOCRYSTALS; NONVOLATILE STORAGE;

CERIUM OXIDE; TRAPPING LAYERS;

FLASH MEMORY;

EID: 34547842160     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3291     Document Type: Article

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