Three-dimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memories

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 6182-6187

  De Sousa, J S ^a   Thean, A V ^b   Leburton, J P ^a   Freire, V N ^c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b MOTOROLA INC   (United States)

^c FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; CHARGING PROCESS; CHARGING TIME; ELECTRON TRANSFER; METAL OXIDE SEMICONDUCTOR; ORDERS OF MAGNITUDE; RETENTION TIME; SELF-CONSISTENT SIMULATIONS; SILICON NANOCRYSTALS; TUNNELING TIME;

FLASH MEMORY; OPTICAL WAVEGUIDES; POISSON EQUATION;

THREE DIMENSIONAL COMPUTER GRAPHICS;

EID: 0037112988     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509105     Document Type: Article

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