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Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure

(7) Yang, M a Chen, T P a Liu, Z a Wong, J I a Zhang, W L b Zhang, S b Liu, Y c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DIFFUSION; CHARGE LEAKAGE; CHARGE RETENTION; CHARGE STORAGE; CHARGE TRANSFER MECHANISMS; CONCENTRATION OF; GATE OXIDE; GE ATOM; GE NANOCRYSTALS; NON-VOLATILE MEMORIES; OXIDE LAYER; SI SUBSTRATES; SIGNIFICANT IMPACTS; THERMAL-ANNEALING;

ANNEALING; CHARGE TRANSFER; CHEMICAL PROPERTIES; DISSOLUTION; ION BOMBARDMENT; ION EXCHANGE; ION IMPLANTATION; MASS TRANSFER; NANOCRYSTALS;

GERMANIUM;

EID: 71749109000 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3259396 Document Type: Article

Times cited : (32)

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