Pt nanocrystals embedded in remote plasma atomic-layer-deposited HfO 2 for nonvolatile memory devices

Electrochemical and Solid-State Letters

Volumn 12, Issue 4, 2009, Pages

  Kim, Honggyu ^a   Woo, Sanghyun ^a   Kim, Hyungchul ^a   Bang, Seokhwan ^a   Kim, Yongchan ^a   Choi, Daesik ^a   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRODEPOSITION; HAFNIUM COMPOUNDS; NANOCRYSTALLINE ALLOYS; PLATINUM; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; THERMAL EVAPORATION;

A DENSITIES; ATOMIC-LAYER-DEPOSITED; AVERAGE SIZES; CAPACITANCE-VOLTAGE MEASUREMENTS; CHARGE LOSS; COMPETITIVE RETENTIONS; CONTROL LAYERS; ELECTRON-BEAM EVAPORATIONS; FLAT-BAND VOLTAGE SHIFTS; GATE VOLTAGES; MEMORY EFFECTS; NON VOLATILE MEMORY DEVICES; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATIONS; REMOTE PLASMAS; THERMAL-ANNEALING;

NANOCRYSTALS;

EID: 60449104965     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3067834     Document Type: Article

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