Investigation into IGBT dV/dt during turn-off and its temperature dependence

IEEE Transactions on Power Electronics

Volumn 26, Issue 10, 2011, Pages 3019-3031

  Bryant, Angus ^a,b   Yang, Shaoyong ^a   Mawby, Philip ^a   Xiang, Dawei ^c   Ran, Li ^c   Tavner, Peter ^c   Palmer, Patrick R ^d  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b GENERAL ELECTRIC COMPANY   (United States)

^c DURHAM UNIVERSITY   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Converter; dynamic avalanche; power electro nics; power semiconductor device; reliability

Indexed keywords

CLOSED-FORM EXPRESSION; COLLECTOR VOLTAGE; CONVERTER; EXPERIMENTAL MEASUREMENTS; HIGH-VOLTAGES; JUNCTION TEMPERATURES; POWER SEMICONDUCTOR DEVICE; POWER SEMICONDUCTOR DEVICES; TEMPERATURE DEPENDENCE; VARIABLE LOADS;

CONDITION MONITORING; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SWITCHES; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT; WIND POWER;

ACTIVE FILTERS;

EID: 80054705029     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2125803     Document Type: Article

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