Physics-based models of power semiconductor devices for the circuit simulator SPICE

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 1998, Pages 1726-1730

  Kraus, R ^a   Tuerkes, P ^a   Sigg, J ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

POWER SEMICONDUCTOR DEVICES; SOFTWARE PACKAGE PSPICE;

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC NETWORK ANALYSIS; FUNCTIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

POWER ELECTRONICS;

EID: 0031633633     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.1998.703414     Document Type: Conference Paper

References (8)

1. H.Göbel, "A unified method for modeling semiconductor power devices", IEEE Trans, on Power Electronics, vol. 9, no. 5, pp. 497-505, Sep. 1994
2. Metzner, T. Vogler, D. Schröder, "A modular concept for the circuit simulation of bipolar semiconductors", IEEE Trans, on Power Electronics, vol. 9, no. 5, pp. 506-513, Sep. 1994
3. Kraus, K. Hoffmann, H.J. Mattausch, "A precise model for the transient characteristics of power diodes", PESC'92 Ree, pp. 863-869
4. Kraus, K. Hoffmann, "An analytical model of IGBTs with low emitter efficiency", Proc. ISPSD'93, pp. 30-34
5. Hefner, D.M. Dieboldt, "An experimentally verified IGBT model implemented in the Saber circuit simulator", PESC'91 Ree, pp. 10-19
6. Strallo, "SPICE modeling of power pin diode using asymptotic waveform evaluation", PESC'96 Ree., pp. 44-50
7. Shen, T.P. Chow, "Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation", Proc. ISPSD'93, pp. 165-170
8. Musumeci et al., "PT-IGBT PSPICE model with new parameter extraction for life-time and epy dependent behavior simulation", PESC'96 Ree, pp. 1682-1688