Two-dimensional analytical models of the carrier distribution in the on-state of the IGBT

Solid State Electronics

Volumn 38, Issue 10, 1995, Pages 1781-1790

  Feiler, W ^a   Gerlach, W ^a   Wiese, U ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039663778     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)00294-P     Document Type: Article

References (14)

1. Insulated gate transistor physics: Modeling and optimization of the on-state characteristics
2. The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT)
3. Surface mobility modeling
4. Carrier mobilities in silicon empirically related to doping and field