Physics-based model of planar-gate IGBT including MOS side two-dimensional effects

IEEE Transactions on Industry Applications

Volumn 46, Issue 6, 2010, Pages 2556-2567

  Lu, Liqing ^a   Bryant, Angus ^b   Hudgins, Jerry L ^c   Palmer, Patrick R ^d   Santi, Enrico ^a  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Insulated gate bipolar transistor (IGBT) model; physics based model; power semiconductor modeling

Indexed keywords

2D EFFECT; CARRIER DISTRIBUTIONS; DRIFT REGIONS; FINITE ELEMENT SIMULATIONS; MODIFIED MODEL; PHYSICS-BASED; PHYSICS-BASED MODELS; POWER SEMICONDUCTORS; STEADY STATE SOLUTION; TWO-DIMENSIONAL EFFECTS;

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS;

ACTIVE FILTERS;

EID: 78649353098     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2010.2071190     Document Type: Article

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