Measurement of the transient junction temperature in MOSFET devices under operating conditions

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1707-1712

  Barlini, D ^a   Ciappa, M ^a   Mermet Guyennet, M ^b   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

^b ALSTOM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; THERMAL EFFECTS; TRANSIENT ANALYSIS;

ELECTRICAL THERMOSENSITIVE PARAMETERS; THERMOSENSITIVE PARAMETERS; TRANSIENT AVERAGE JUNCTION TEMPERATURE;

MOSFET DEVICES;

EID: 34548751214     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.008     Document Type: Article

References (8)

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