Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

IEEE Transactions on Power Electronics

Volumn 21, Issue 2, 2006, Pages 295-309

  Bryant, Angus T ^a   Kang, Xiaosong ^b   Santi, Enrico ^b   Palmer, Patrick R ^a   Hudgins, Jerry L ^b,c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b University of South Carolina   (United States)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

Insulated gate bipolar transistor (IGBT) model; Optimized parameter extraction; Parameter extraction; Power diode model; Semiconductor modeling

Indexed keywords

DIODES; INSULATED GATE BIPOLAR TRANSISTORS; OPTIMIZATION; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS;

CIRCUIT SIMULATOR; OPTIMIZED PARAMETER EXTRACTION; POWER DIODE MODEL;

FEATURE EXTRACTION;

EID: 33644910694     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2005.869742     Document Type: Article

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