Circuit simulator models for the diode and IGBT with full temperature dependent features

IEEE Transactions on Power Electronics

Volumn 18, Issue 5, 2003, Pages 1220-1228

  Palmer, Patrick R ^a   Santi, Enrico ^b   Hudgins, Jerry L ^b   Kang, Xiaosong ^b   Joyce, John C ^a   Eng, Poh Yoon ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b University of South Carolina   (United States)

Author keywords

IGBT; Physics based semiconductor device models; Power diode; Quasi 2 D semiconductor device models

Indexed keywords

BOUNDARY CONDITIONS; CAPACITANCE; COMPUTER SIMULATION; DIODES; ELECTRON MOBILITY; MOSFET DEVICES; TRANSCONDUCTANCE; TWO DIMENSIONAL;

CIRCUIT SIMULATOR MODELS; DRAIN-EMITTER VOLTAGE; DRAIN-GATE VOLTAGE;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0141787901     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2003.816194     Document Type: Article

References (11)

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