메뉴 건너뛰기




Volumn 145, Issue 5, 1998, Pages 354-359

Analysis of IGBT modules connected in series

Author keywords

Bipolar transistors; Numerical analysis

Indexed keywords

BIPOLAR TRANSISTORS; DESIGN; ELECTRIC NETWORK ANALYSIS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; STATE SPACE METHODS;

EID: 0032182614     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19982123     Document Type: Article
Times cited : (29)

References (20)
  • 1
    • 33746115600 scopus 로고
    • Series connection of MOSFET, BIPOLAR and IGBT devices
    • Application manual, Milan, Italy
    • LETOR, R.: 'Series connection of MOSFET, BIPOLAR and IGBT devices' in 'SGS-Thompson Designers guide to power products'. Application manual, Milan, Italy, 1992, pp. 759-770
    • (1992) SGS-Thompson Designers Guide to Power Products , pp. 759-770
    • Letor, R.1
  • 3
    • 0028044359 scopus 로고
    • Fast high-power, high voltage switch using series connected IGBTs with active gate-controlled voltage balancing
    • Orlando, Florida, USA
    • GERSTER, C.: 'Fast high-power, high voltage switch using series connected IGBTs with active gate-controlled voltage balancing'. Proceedings of 9th IEEE Applied power electronics conference, APEC'9-Orlando, Florida, USA, 1994, Vol. 1, pp. 469-472
    • (1994) Proceedings of 9th IEEE Applied Power Electronics Conference, APEC'9 , vol.1 , pp. 469-472
    • Gerster, C.1
  • 4
    • 84937415652 scopus 로고
    • The series connection of IGBTs with optimised voltage sharing in the switching transient
    • Atlanta, Georgia, USA, June
    • PALMER, P.R., and GITHIARI, A.N.: 'The series connection of IGBTs with optimised voltage sharing in the switching transient'. Proceedinss of 26th IEEE Power electronics specialists conference, PESC'95, Atlanta, Georgia, USA, June 1995, Vol. 1, pp. 44-50
    • (1995) Proceedinss of 26th IEEE Power Electronics Specialists Conference, PESC'95 , vol.1 , pp. 44-50
    • Palmer, P.R.1    Githiari, A.N.2
  • 8
    • 0026835179 scopus 로고
    • Static and dynamic behaviour of paralleled IGBTs
    • LETOR, R.: 'Static and dynamic behaviour of paralleled IGBTs', IEEE Trans. Industry Appl., 1992, 28, (2), pp. 395-402
    • (1992) IEEE Trans. Industry Appl. , vol.28 , Issue.2 , pp. 395-402
    • Letor, R.1
  • 10
    • 0021452819 scopus 로고
    • An analysis and experimental verification of parasitic oscillations in paralled power MOSFETs
    • KASSAKIAN, J., and LAU, D.: 'An analysis and experimental verification of parasitic oscillations in paralled power MOSFETs', IEEE Trans. Electron Devices, 1984, ED-31, (7), pp. 959-963
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.7 , pp. 959-963
    • Kassakian, J.1    Lau, D.2
  • 14
    • 29144505545 scopus 로고
    • An analytical model for the steady state and transient characteristics of the power insulated-gate bipolar transistor
    • HEFNER, A., and BLACKBURN, D.: 'An analytical model for the steady state and transient characteristics of the power insulated-gate bipolar transistor', Solid State Electron.. 1988, 31, (10), pp. 1513-1532
    • (1988) Solid State Electron. , vol.31 , Issue.10 , pp. 1513-1532
    • Hefner, A.1    Blackburn, D.2
  • 16
    • 0022906651 scopus 로고
    • Analysis of the output conductance of IGT
    • BALIGA, B.: 'Analysis of the output conductance of IGT', IEEE Electron Device Lett., 1986, EDL-7, (12), pp. 686-688
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , Issue.12 , pp. 686-688
    • Baliga, B.1
  • 19
    • 0031176418 scopus 로고    scopus 로고
    • The series connection of IGBTs with active voltage sharing
    • PALMER, P.R., and GITHIARI, A.N.: 'The series connection of IGBTs with active voltage sharing', IEEE Trans. Power Electron., 1997, 12, (4), pp. 637-644
    • (1997) IEEE Trans. Power Electron. , vol.12 , Issue.4 , pp. 637-644
    • Palmer, P.R.1    Githiari, A.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.