Modeling the [dV/dt] of the IGBT during inductive turn off

IEEE Transactions on Power Electronics

Volumn 14, Issue 4, 1999, Pages 601-606

  Ramamurthy, A ^a   Sawant, S ^b   Baliga, B J ^b,c  

^a Vitesse Semiconductor Corporation   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC INVERTERS; ELECTRIC LOSSES; ELECTRIC POTENTIAL; GATES (TRANSISTOR); PULSE WIDTH MODULATION; SEMICONDUCTOR DEVICE MODELS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0033153994     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.774195     Document Type: Article

References (8)

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2. F. Robb, I. Wan, and S. Yu, "Increasing the switching speed of high voltage IGBT's," in Proc. ISPSD97, pp. 251-254.
3. A. R. Heffner and D. L. Blackburn, "An analytical model for the steady state and transient characteristics of the power insulated gate bipolar transistor," Solid State Electron., vol. 31, no. 10, pp. 1513-1532, 1988.
4. _, "A performance trade-off for the insulated gate bipolar transistor: Buffer layer versus base lifetime reduction," IEEE Trans. Power Electron., vol. PE-2, pp. 194-207, July 1987.
5. A. Heffner, "An improved understanding for the transient operation of the power insulated gate bipolar transistor," IEEE Trans. Power Electron., vol. 5, pp. 459-468, Oct. 1990.
6. _, "An investigation of the drive circuit requirements for the power insulated gate bipolar transistor," IEEE Trans. Power Electron., vol. 6, pp. 208-219, Apr. 1991.
7. M. Trivedi and K. Shenai, "Modeling the turn-off of IGBT's in hard and soft switching applications," IEEE Trans. Electron Devices, vol. 44, pp. 887-893, May 1997.
8. B. J. Baliga, Power Semiconductor Devices. Boston, MA: PWS, 1996, pp. 426-501.