New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1772-1777

  Barlini, D ^a   Ciappa, M ^a   Castellazzi, A ^a   Mermet Guyennet, M ^b   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

^b ALSTOM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; PARAMETER ESTIMATION; SIGNAL PROCESSING; THERMAL EFFECTS; TRANSCONDUCTANCE;

OPERATING CONDITIONS; SIGNAL GENERATION; THERMO-SENSITIVE PARAMETERS; TRANSIENT JUNCTION TEMPERATURE;

MICROELECTROMECHANICAL DEVICES;

EID: 33748040759     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.058     Document Type: Article

References (6)

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2. Baliga B.J. Power Semiconductor devicese (1996), PWS Publishing Company
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4. Mohan N. Power Electronics Converter, Applications, and Design. 2nd ed. (1995), John Wiley & Sons
5. Ciappa M., Fichtner W., Kojima T., and Yamada Y. Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric Vehicles. Microelectronics Reliability 5 (2005) 1694-1699
6. Lourdel G. Méthodologie et outils de calcul numérique pour la prise es compte de la compatibilité électromagnétique des nouveaux prototypes des circuit intégrés de puissance. Doctorat de l' Université Toulouse III (2005).