Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 μm

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 33-36, 2005, Pages

  Caroff, P ^a   Bertru, N ^a   Le Corre, A ^a   Dehaese, O ^a   Rohel, T ^a   Alghoraibi, I ^a   Folliot, H ^a   Loualiche, S ^a  

^a INSA DE RENNES   (France)

Author keywords

(311)B surface; InAs; InP; Molecular beam epitaxy; Nanostructures; Quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SAMPLING; SEMICONDUCTING INDIUM PHOSPHIDE; TELECOMMUNICATION SYSTEMS;

(311)B SURFACE; FLUX EFFECT; INAS; SIZE DISPERSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 28844479175     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1069     Document Type: Article

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