Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap

Journal of Applied Physics

Volumn 107, Issue 3, 2010, Pages

  Netzel, C ^a   Hoffmann, V ^a   Wernicke, T ^a   Knauer, A ^a   Weyers, M ^a   Kneissl, M ^a,b   Szabo, N ^c  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIMOLECULAR RECOMBINATION; CARRIER DIFFUSIVITY; EMISSION INTENSITY; EXCITATION POWER; HOLE WAVE FUNCTIONS; INTERNAL QUANTUM EFFICIENCY; LASER DIODES; LOW TEMPERATURES; NEAR ROOM TEMPERATURE; PHOTOLUMINESCENCE INTENSITIES; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL; QUANTUM WELL STRUCTURES; RADIATIVE RECOMBINATION; RED WAVELENGTH RANGE; RELATIVE INTENSITY; ROOM TEMPERATURE; SCREENING EFFECT; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; ULTRAVIOLET LASERS; WAVE FUNCTIONS;

QUANTUM EFFICIENCY;

EID: 76949103191     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3294624     Document Type: Article

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