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Journal of Electronic Materials

Volumn 28, Issue 5, 1999, Pages 520-527

Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

(5) Heitz, R a Mukhametzhanov, I b Madhukar, A b Hoffmann, A a Bimberg, D a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b UNIVERSITY OF SOUTHERN CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ABSORPTION; ELECTRON EMISSION; ELECTRON TRANSITIONS; EXCITONS; FERMI LEVEL; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE;

CARRIER CAPTURE RATE; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; SELF ORGANIZED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032640588 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-999-0105-z Document Type: Article

Times cited : (133)

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