Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Applied Surface Science

Volumn 253, Issue 7, 2007, Pages 3503-3507

  Kim, J H ^a   Park, Y J ^a   Park, Y M ^a   Song, J D ^a   Lee, J I ^a   Kim, T W ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Electrical properties; Epitaxy; Optical properties; Self assembly; Semiconductor

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ATOMIC LAYER EPITAXY (ALE); ELECTRONIC STATE; INTERBAND TRANSITION; ZERO-DIMENSIONAL CARRIER CONFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846335541     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.07.051     Document Type: Article

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