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Volumn 20, Issue 43, 2009, Pages
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The structural and optical characterization of high areal density Ga xIn1-xP quantum dots on GaP
a
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Author keywords
[No Author keywords available]
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Indexed keywords
AREAL DENSITIES;
FUTURE APPLICATIONS;
HIGH AREAL DENSITY;
OPTICAL CHARACTERIZATION;
PHOTOLUMINESCENCE PROPERTIES;
QUANTUM DOT;
QUANTUM DOTS;
SEM;
STRUCTURAL AND OPTICAL PROPERTIES;
VISIBLE WAVELENGTHS;
ATOMIC FORCE MICROSCOPY;
CRYSTAL GROWTH;
GALLIUM;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
OPTOELECTRONIC DEVICES;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WIRES;
OPTICAL PROPERTIES;
GALLIUM;
INDIUM;
PHOSPHORUS;
QUANTUM DOT;
ARTICLE;
ATOMIC FORCE MICROSCOPY;
CHEMICAL STRUCTURE;
DENSITY;
MORPHOLOGY;
OPTICS;
PHOTOLUMINESCENCE;
PRIORITY JOURNAL;
QUANTUM MECHANICS;
SCANNING ELECTRON MICROSCOPY;
SPECTRAL SENSITIVITY;
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EID: 70349662044
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/20/43/434016 Document Type: Article |
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Times cited : (11)
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References (15)
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