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Volumn 89, Issue 11, 2006, Pages
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Optical properties of InGaNP quantum wells grown on GaP (100) substrates by gas-source molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON EFFECTIVE MASSES;
INGA1-N0.0058P0.995;
INGANP;
VARSHNI EQUATIONS;
COMPOSITION;
CONCENTRATION (PROCESS);
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR QUANTUM WELLS;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 33748711669
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2345025 Document Type: Article |
Times cited : (9)
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References (15)
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