Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 322-324

  Fukami, F ^a   Umeno, K ^a   Furukawa, Y ^a   Urakami, N ^a   Mitsuyoshi, S ^a   Okada, H ^a   Yonezu, H ^a   Wakahara, A ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Dilute nitride; Electronic structure; Finite element method; Quantum dot

Indexed keywords

BAND-ANTICROSSING MODEL; CONDUCTION-BAND MINIMUM; DESIGN METHOD; DILUTE NITRIDES; ENERGY DIFFERENCES; N INCORPORATION; PEAK ENERGY; QUANTUM DOT; QUANTUM DOTS; QUANTUM LEVELS; ROOM TEMPERATURE; SELF-ASSEMBLED; TRANSITION ENERGY;

DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FINITE ELEMENT METHOD; GALLIUM ALLOYS; NITRIDES; QUANTUM THEORY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79951702809     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000500     Document Type: Article

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