High quality relaxed GaAs quantum dots in GaP matrix

Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

  Shamirzaev, Timur S ^a   Abramkin, Demid S ^a   Gutakovskii, Anton K ^a   Putyato, Mikhail A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; GAAS; HETEROSTRUCTURES; HIGH QUALITY; MATRIX; NONRADIATIVE CENTERS; QUANTUM DOT; SELF ASSEMBLED QUANTUM DOTS;

GALLIUM ARSENIDE; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 77955141329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3464561     Document Type: Article

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