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Volumn 51, Issue 5, 2004, Pages 741-748

Full band approach to tunneling in MOS structures

Author keywords

Metal oxide semiconductor (MOS); Tight binding (TB) full band simulations; Tunneling

Indexed keywords

THREE DIMENSIONAL MODELS; TIGHT BINDING FULL BAND SIMULATION;

EID: 2442665648     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.826862     Document Type: Article
Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.