Full band approach to tunneling in MOS structures

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 741-748

  Sacconi, F ^a,b   Di Carlo, Aldo ^a,b   Lugli, Paolo ^b   Städele, Martin ^c   Jancu, Jean Marc ^a,d  

^a INFM   (Italy)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d SCUOLA NORMALE SUPERIORE   (Italy)

Author keywords

Metal oxide semiconductor (MOS); Tight binding (TB) full band simulations; Tunneling

Indexed keywords

THREE DIMENSIONAL MODELS; TIGHT BINDING FULL BAND SIMULATION;

ELECTRIC CONDUCTIVITY; ELECTRIC NETWORK PARAMETERS; ELECTRON TUNNELING; MOS DEVICES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 2442665648     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.826862     Document Type: Article

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