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Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

Red light-emitting diodes based on InP/GaP quantum dots

(5) Hatami, F a Lordi, V a Harris, J S a Kostial, H b Masselink, W T c

a Stanford University (United States)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

c HUMBOLDT UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); LATTICE MISMATCH; ROOM TEMPERATURE; SQUARE WAVES;

ELECTROLUMINESCENCE; ENERGY GAP; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

LIGHT EMITTING DIODES;

EID: 18844410552 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1884752 Document Type: Article

Times cited : (52)

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