Organic field-effect transistors - A combined study on short-channel effects and the influence of substrate pre-treatment on ambient stability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8118, Issue , 2011, Pages

  Klug, A ^a   Meingast, A ^a   Wurzinger, G ^a   Blumel A ^a   Schmoltner, K ^a   Scherf, U ^c   List, E J W ^a,b  

^a NanoTecCenter Weiz Forschungsgesellschaft mbH   (Austria)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^c UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

ambient stability; OFET; Organic field effect transistor; organic semiconductors; plastic electronics; sensors

Indexed keywords

ADJACENT LAYERS; AIR EXPOSURE; AMBIENT CONDITIONS; AMBIENT STABILITY; BOTTOM-CONTACT; CHANNEL LENGTH; DEGRADATION BEHAVIOR; DEVICE PERFORMANCE; DIELECTRIC SURFACE; FIELD-EFFECT MOBILITIES; HEXAMETHYLDISILAZANE; ORGANIC SEMICONDUCTOR; PLASTIC ELECTRONICS; POLY (3-HEXYLTHIOPHENE); PRE-TREATMENT; REGIO-REGULAR; SEMICONDUCTING MATERIALS; SHORT-CHANNEL EFFECT; SUBSTRATE SURFACE;

CARRIER MOBILITY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING; SENSORS; STABILITY; SURFACES; TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80053914445     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.893835     Document Type: Conference Paper

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