Integrated optoelectronic devices based on conjugated polymers

Science

Volumn 280, Issue 5370, 1998, Pages 1741-1744

  Sirringhaus, Henning ^a   Tessler, Nir ^a   Friend, Richard H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELEMENTARY PARTICLES; FIELD EFFECT TRANSISTORS; LIGHT EMITTING DIODES; ORGANIC POLYMERS;

DISORDERED POLYMERS; POLARONS;

INTEGRATED OPTOELECTRONICS;

HYDROXYL GROUP; OLIGOMER; POLYMER; SILICON; THIOPHENE DERIVATIVE;

ARTICLE; DEVICE; ELECTRODE; ELECTRONICS; PRIORITY JOURNAL; SEMICONDUCTOR; X RAY DIFFRACTION;

EID: 0032511040     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.280.5370.1741     Document Type: Article

References (26)

1. N. Tessler, N. T. Harrison, R. H. Friend, Adv. Mater. 10, 64 (1998).
2. See, for example, the World Wide Web site of Cambridge Display Technology (www.cdtltd.co.uk).
3. A. R. Brown, A. Pomp, C. M. Hart, D. M. de Leeuw, Science 270, 972 (1995).
4. J. H. Burroughes, C. A. Jones, R. H. Friend, Nature 335, 137 (1988).
5. A. R. Brown, C. P. Jarrett, D. M. de Leeuw, M. Matters, Synth. Met. 88, 37 (1997).
6. C. C. Wu et al., IEEE Electron Device Lett. 18, 609 (1997).
7. Z. Bao, A. Dodabalapur, A. J. Lovinger, Appl. Phys. Lett. 69, 4108 (1996).
8. The regioregular P3HT with HT coupling >98.5% was obtained commercially from Aldrich Ltd., Dorset, UK. The synthesis route is described in T.-A. Chen, X. Wu, R. D. Rieke, J. Am. Chem. Soc. 117, 233 (1995).
9. C. W. Tang and B. C. Hseih, U.S. Patent 5 550 066 (1996).
10. D. Braun and A. J. Heeger, Appl. Phys. Lett. 58, 1982 (1991); for a review, see N. C. Greenham and R. H. Friend, in Solid State Physics, vol. 49, H. Ehrenreich and F. Spaepen, Eds. (Academic Press, San Diego, CA, 1995), pp. 1-149.
11. D. Braun and A. J. Heeger, Appl. Phys. Lett. 58, 1982 (1991); for a review, see N. C. Greenham and R. H. Friend, in Solid State Physics, vol. 49, H. Ehrenreich and F. Spaepen, Eds. (Academic Press, San Diego, CA, 1995), pp. 1-149.
12. G. Horowitz, F. Garnier, A. Yassar, R. Hajlaoui, F. Kouki, Adv. Mater. 8, 52 (1996).
13. S. F. Nelson, Y. Y. Lin, D. J. Gundlach, T. N. Jackson. Appl. Phys. Lett. 72, 1854 (1998).
14. H. Sirringhaus, N. Tessler, R. H. Friend, unpublished data.
15. Only at the source-drain contacts do the carriers have to travel normal to the layer structure. The film thickness must be sufficiently small to keep the contact resistance low (Fig. 3B).
16. M. Shur, M. Hack, J. G. Shaw, J. Appl. Phys. 66, 3371 (1989); M. Shur and M. Hack, ibid. 55, 3831 (1984).
17. M. Shur, M. Hack, J. G. Shaw, J. Appl. Phys. 66, 3371 (1989); M. Shur and M. Hack, ibid. 55, 3831 (1984).
18. G. Horowitz and P. Delannoy, ibid. 70, 469 (1991).
19. K. D. Mackenzie, A. J. Snell, I. French, P. G. Le Comber, W. E. Spear, Appl. Phys. A 31, 87 (1983); A. C. Hourd and W. E. Spear, Philos. Mag. B 51, L13 (1984).
20. K. D. Mackenzie, A. J. Snell, I. French, P. G. Le Comber, W. E. Spear, Appl. Phys. A 31, 87 (1983); A. C. Hourd and W. E. Spear, Philos. Mag. B 51, L13 (1984).
21. o ≈ -2.5 V at 144 K.
22. o).
23. L. Torsi, A. Dodabalapur, L. J. Rothberg, A. W. P. Fung, H. E. Katz, Science 272, 1462 (1996).
24. _, Phys. Rev. B 57, 2271 (1998).
25. A. Dodabalapur et al., Appl. Phys. Lett., in press.
26. 2 gate oxide, and Cambridge Display Technology for the MEH-PPV polymer. Supported by the European Commission (ESPRIT 24793-Frequent) and the Engineering and Physical Sciences Research Council.