Air stable, high performance pentacene thin-film transistor fabricated on SiO2 gate insulator treated with β-phenethyltrichlorosilane

Applied Physics Letters

Volumn 90, Issue 13, 2007, Pages

  Kumaki, Daisuke ^a   Yahiro, Masayuki ^b   Inoue, Youji ^c   Tokito, Shizuo ^c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL GROWTH; GATE DIELECTRICS; SILICA; SURFACE TREATMENT;

FIELD EFFECT MOBILITY; PENTACENE; PHENETHYLTRICHLOROSILANES;

THIN FILM TRANSISTORS;

EID: 34047126341     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717552     Document Type: Article

References (10)

1. D. J. Gundlach, Y.-Y. Lin, and T. N. Jackson, IEEE Electron Device Lett. 18, 87 (1997).
2. Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Trans. Electron Devices 44, 1325 (1997).
3. C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, T. N. Jackson, M. G. Kane, I. G. Hill, M. S. Hammond, J. Campi, B. K. Greening, J. Francl, and J. West, Appl. Phys. Lett. 80, 1088 (2002).
4. L. Zhou, A. Wanga, S.-C. Wu, J. Sun, S. Park, and T. N. Jackson, Appl. Phys. Lett. 88, 083502 (2006).
5. Z.-T. Zhu, J. T. Mason, R. Dieckmann, and G. G. Malliaras, Appl. Phys. Lett. 81, 4643 (2002).
6. Y. Qiu, Y. Hu, G. Dong, L. Wang, J. Wie, and Y. Ma, Appl. Phys. Lett. 83, 1644 (2003).
7. R. Ye, M. Bara, K. Suzuki, Y. Ohishi, and K. Mod, Thin Solid Films 464-465, 437 (2004).
8. Ch. Pannemann, T. Diekamann, and U. Hilleringmann, J. Mater. Res. 19, 1999 (2004).
9. C. R. Kagan, A. Afzali, and T. O. Graham, Appl. Phys. Lett. 86, 193505 (2005).
10. I. Yagi, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 86, 103502 (2005).