Modification of the electric conduction at the pentacene SiO2 interface by surface termination of SiO2

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Yagi, Iwao ^a,b   Tsukagoshi, Kazuhito ^a,c   Aoyagi, Yoshinobu ^a,b  

^a RIKEN   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; INTERFACES (MATERIALS); MONOLAYERS; MORPHOLOGY; SUBSTRATES; SURFACE ROUGHNESS; SURFACE TREATMENT; THIN FILM TRANSISTORS;

GATE ELECTRODES; ORGANIC THIN FILMS; OXIDE DIELECTRICS; PENTACENE;

SILICA;

EID: 17944377910     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1875749     Document Type: Article

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