Surface-treatment effects on organic thin-film transistors

Synthetic Metals

Volumn 148, Issue 1, 2005, Pages 75-79

  Lim, Sang Chul ^a,b   Kim, Seong Hyun ^a   Lee, Jung Hun ^a,c   Kim, Mi Kyung ^a   Kim, Do Jin ^b   Zyung, Taehyoung ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chungnam National University   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

HMDS treatment; O2 plasma treatment; Organic thin film transistors; OTS treatment; Semiconductors

Indexed keywords

CHEMICAL MODIFICATION; CONTACT ANGLE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; FREE ENERGY; SILICA; SURFACE TREATMENT;

ACTIVE LAYERS; HMDS TREATMENT; ORGANIC THIN-FILM TRANSISTORS (OTFT); OTS TREATMENT; PLASMA TREATMENT;

THIN FILM TRANSISTORS;

EID: 10444289103     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2004.08.034     Document Type: Conference Paper

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