Influence of moisture on device characteristics of polythiophene-based field-effect transistors

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 5088-5093

  Hoshino, Satoshi ^a   Yoshida, Manabu ^a   Uemura, Sei ^a   Kodzasa, Takehito ^a   Takada, Noriyuki ^a   Kamata, Toshihide ^a   Yase, Kiyoshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; LIGHT EMITTING DIODES; MOISTURE; NITROGEN; ORGANIC POLYMERS; OXYGEN; PRESSURE EFFECTS; THIN FILMS; WATER;

AMBIENT PRESSURE; MICROCRYSTALLINE DOMAINS; THIN SOLID FILMS;

FIELD EFFECT TRANSISTORS;

EID: 2442612962     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1691190     Document Type: Article

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