Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Hamadani, B H ^a   Richter, C A ^a   Gundlach, D J ^a   Kline, R J ^a   McCulloch, I ^b   Heeney, M ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Merck Chemicals   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; MATHEMATICAL MODELS; TEMPERATURE DISTRIBUTION;

NONLINEAR TRANSPORT DATA; POOLE-FRENKEL MODEL;

FIELD EFFECT TRANSISTORS;

EID: 34548423739     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769782     Document Type: Article

References (29)

1. H. Sirringhaus, Adv. Mater. (Weinheim, Ger.) 17, 2411 (2005).
2. J. Frenkel, Phys. Rev. 54, 647 (1938).
3. W. D. Gill, J. Appl. Phys. 43, 5033 (1972).
4. P. W. M. Blom, M. J. M. de Jong, and M. G. van Munster, Phys. Rev. B 55, R656 (1997).
5. P. N. Murgatroyd, J. Phys. D 3, 151 (1970).
6. H. Bässler, Phys. Status Solidi B 175, 15 (1993).
7. H. C. F. Martens, P. W. M. Blom, and H. F. M. Schoo, Phys. Rev. B 61, 7489 (2000).
8. D. H. Dunlap, P. E. Parris, and V. M. Kenkre, Phys. Rev. Lett. 77, 542 (1996).
9. S. V. Novikov, D. H. Dunlap, V. M. Kenkre, P. E. Parris, and A. V. Vannikov, Phys. Rev. Lett. 81, 4472 (1998).
10. Z. G. Yu, D. L. Smith, A. Saxena, R. L. Martin, and A. R. Bishop, Phys. Rev. Lett. 84, 721 (2000).
11. T. Kreouzis, D. Poplavskyy, S. M. Tuladhar, M. Campoy-Quiles, J. Nelson, A. J. Campbell, and D. D. C. Bradley, Phys. Rev. B 73, 235201 (2006).
12. M. L. Chabinyc, J.-P. Lu, R. A. Street, Y. Wu, P. Liu, and B. S. Ong, J. Appl. Phys. 96, 2063 (2004).
13. B. H. Hamadani and D. Natelson, J. Appl. Phys. 95, 1227 (2004).
14. P. Stallinga, H. L. Gomes, F. Biscarini, M. Murgia, and D. M. de Leeuw, J. Appl. Phys. 96, 5277 (2004).
15. S. Cherian, C. Donley, D. Mathine, L. LaRussa, W. Xia, and N. Armstrong, J. Appl. Phys. 96, 5638 (2004).
16. A. Bolognesi, M. Berliocchi, M. Manenti, A. Di Carlo, P. Lugli, K. Lmimouni, and C. Dufour, IEEE Trans. Electron Devices 51, 1997 (2004).
17. I. McCulloch, Nat. Mater. 5, 328 (2006).
18. R. J. Kline, D. M. DeLongchamp, D. A. Fischer, E. K. Lin, M. Heeney, I. McCulloch, and M. F. Toney, Appl. Phys. Lett. 90, 062117 (2007).
19. D. M. DeLongchamp, Adv. Mater. (Weinheim, Ger.) 19, 833 (2007).
20. A. C. Tickle, Thin-Film Transistors (Wiley, New York, 1969).
21. B. H. Hamadani and D. Natelson, J. Appl. Phys. 97, 064508 (2005).
22. D. J. Gundlach, L. Zhou, J. A. Nichols, T. N. Jackson, P. V. Necliudov, and M. S. Shur, J. Appl. Phys. 100, 024509 (2006).
23. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Solid-State Electron. 47, 297 (2003).
24. N. J. Watkins, L. Yan, and Y. Gao, Appl. Phys. Lett. 80, 4384 (2002).
25. W. Gao and A. Kahn, J. Appl. Phys. 94, 359 (2003).
26. D. M. Delongchamp (submitted).
27. S. V. Rakhmanova and E. M. Conwell, Appl. Phys. Lett. 76, 3822 (2000).
28. T. Minari, T. Nemoto, and S. Isoda, J. Appl. Phys. 99, 034506 (2006).
29. C. Goh, R. J. Kline, M. D. McGeheea, E. N. Kadnikova, and J. M. J. Fŕchet, Appl. Phys. Lett. 86, 122110 (2005).