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Volumn 98, Issue 5, 2011, Pages

Nitrogenated amorphous InGaZnO thin film transistor

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT STABILITY; ARGON GAS MIXTURES; CHANNEL LAYERS; DC REACTIVE SPUTTER; ELECTRICAL CHARACTERISTIC; ELECTRICAL RELIABILITY; IN-SITU; NITROGEN INCORPORATION; NITROGEN-DOPING; ROOM TEMPERATURE;

EID: 79951480696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3551537     Document Type: Article
Times cited : (92)

References (14)
  • 3
    • 9744248669 scopus 로고    scopus 로고
    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • DOI 10.1038/nature03090
    • K. Nomura, H. Ohta1, A. Takagi, and T. Kamiya, Nature (London) 0028-0836 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
    • (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 8
    • 34248399209 scopus 로고    scopus 로고
    • Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
    • DOI 10.1063/1.2723543
    • D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, and J. G. Chung, Appl. Phys. Lett. 0003-6951 90, 192101 (2007). 10.1063/1.2723543 (Pubitemid 46738090)
    • (2007) Applied Physics Letters , vol.90 , Issue.19 , pp. 192101
    • Kang, D.1    Lim, H.2    Kim, C.3    Song, I.4    Park, J.5    Park, Y.6    Chung, J.7
  • 14
    • 0000485992 scopus 로고
    • 0022-3727, 10.1088/0022-3727/28/6/034
    • D. H. Zhang, J. Phys. D 0022-3727 28, 1273 (1995). 10.1088/0022-3727/28/ 6/034
    • (1995) J. Phys. D , vol.28 , pp. 1273
    • Zhang, D.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.