Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)m

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4794-4796

  Lee, W J ^a   Ryu, B ^a   Chang, K J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Electronic structure; First principles; IGZO; Oxygen vacancy

Indexed keywords

BOUNDARY STRUCTURE; CONDUCTION-BAND MINIMUM; DEEP DONOR; DEFECT LEVELS; DEFECT PROPERTY; FIRST-PRINCIPLES; IGZO; NEGATIVE-U; THEORETICAL CALCULATIONS; TRANSITION LEVEL; VARIOUS CONFIGURATION; ZNO;

CRYSTALLINE MATERIALS; DEFECTS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; METAL IONS; OXYGEN; VACANCIES; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 74349110496     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.178     Document Type: Article

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