Temperature-dependent transfer characteristics of amorphous InGaZnO 4 thin-film transistors

Japanese Journal of Applied Physics

Volumn 48, Issue 1, 2009, Pages

  Takechi, Kazushige ^a   Nakata, Mitsuru ^a   Eguchi, Toshimasa ^a   Yamaguchi, Hirotaka ^b   Kaneko, Setsuo ^b  

^a Technology Research Association for Advanced Display Materials TRADIM   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; DEFECTS; POINT DEFECTS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

A-SI:H; A-SI:H TFT; ANALYTICAL MODELS; FORMATION ENERGIES; FREE CARRIERS; HIGH TEMPERATURES; HYDROGENATED AMORPHOUS SILICONS; OXIDE SEMICONDUCTORS; SUBTHRESHOLD REGIONS; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES; TRANSFER CHARACTERISTICS;

AMORPHOUS SILICON;

EID: 59649098932     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.011301     Document Type: Article

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