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Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

Depth profile study of Ti implanted Si at very high doses

(5) Olea, J a Pastor, D a Toledano Luque, M a Martil I a Gonzlez Daz, G a

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILE; DIFFERENT EFFECTS; ENERGY DENSITY; HIGH DOSE; IMPLANTED LAYERS; IMPURITY PROFILE; PEAK CONCENTRATIONS;

ANNEALING; MELTING; SNOW;

IMPURITIES;

EID: 80053505566 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3626466 Document Type: Article

Times cited : (9)

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