Intermediate band mobility in heavily titanium-doped silicon layers

Solar Energy Materials and Solar Cells

Volumn 93, Issue 9, 2009, Pages 1668-1673

  Gonzalez Diaz G ^a   Olea, J ^a   Martil I ^a   Pastor, D ^a   Marti A ^b   Antolin E ^b   Luque, A ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

Intermediate band; Mobility; Novel concepts; Silicon; Solar cells; Titanium

Indexed keywords

DEVICE PHYSICS; DOPED SILICON; HIGH-PURITY; INTERMEDIATE BAND; INTERMEDIATE BANDS; MOBILITY; NOVEL CONCEPTS; SI WAFER; TI ATOMS;

ELECTRIC RESISTANCE; HALL MOBILITY; PHOTOVOLTAIC CELLS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOLAR CELLS; TITANIUM;

GALVANOMAGNETIC EFFECTS;

EID: 67649389370     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.05.014     Document Type: Article

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