Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

Journal of Applied Physics

Volumn 94, Issue 2, 2003, Pages 1043-1049

  Yu, K M ^a   Walukiewicz, W ^a   Scarpulla, M A ^b   Dubon, O D ^b   Wu, J ^a   Jasinski, J ^a   Liliental Weber, Z ^a   Beeman, J W ^a   Pillai, M R ^c   Aziz, M J ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ION IMPLANTATION; MELTING; NITROGEN; OPTICAL PROPERTIES; PULSED LASER APPLICATIONS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SYNTHESIS (CHEMICAL);

MISMATCHED ALLOYS;

THIN FILMS;

EID: 0042267275     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1582393     Document Type: Article

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